Overview: Silicon PNP Transistor BC807-16W BC807-25W BC807-40W Small and medium-sized power amplifier , medium power drive and switching applications 1˖base 2˖emitter 3˖collector HFE(1) :Classification Rank %&: %&: %&: Range Marking $ % & 627 Maximum ratings(Ta=25ć unless otherwise noted) Parameter Symbol Value Collector-Base Breakdown Voltage VCBO Collector-Emitter Breakdown Voltage VCEO Emitter-Base Breakdown Voltage Collector Current VEBO IC
Collector Power Dissipation PC Junction Temperature TJ Storage Temperature Tstg ̚ Unit 9 9 9 P$ P: ć ć Electrical Characteristics (Ta=25ć unless otherwise noted) Parameter Symbol Test Condition Min Collector-Base Breakdown Voltage VCBO Collector-Emitter Breakdown Voltage VCEO ,E=-10uA IE=0 ,C=-10mA IB=0 Emitter-Base Breakdown Voltage VEBO ,E=-10uA IC=0 Collector Cutoff Current ICBO 9CB=-45V IE=0 Collector-Emitter Current ICES 9CE=-25V IB=0 Emitter Cutoff Current IEBO 9EB=-4V IC=0 DC Current Gain HFE (1) 9CE=-1V IC=-100mA HFE (2) 9CE=-1V IC=-500mA Collector-Emitter Saturation Voltage VCE(sat) ,C=-500mA IB=-50mA Collector-Base Saturation Voltage transition frequency VBE(sat) ,C=-500mA IB=-50mA fT VCE=-5V IC=-10mA f=100MH Z 100 Max
Unit V V V uA uA uA
V V MHZ 2022-05/17 REV:O RATING AND CHARACTERISTICS CURVES (BC807-16W/25W/40W) DISCLAIMER NOTICE
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