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Rectron

ES3EF Datasheet Preview

ES3EF Datasheet

SUPER FAST SILICON RECTIFIER

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SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
ES3AF
THRU
ES3JF
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Resistive or inductive load.
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code:
ES3AF~ES3JF: ES3A~ES3J
SimplifiedoutlineSMAFandsymbol
MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC = 125 o C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Square Time
Typical Thermal Resistance
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
I2T
R JA
R JC
CJ
TJ, TSTG
ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
@TA = 25oC
@TA = 150oC
VF
IR
trr
NOTES : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
3. Thermal Resistance : Mounted on PCB.
ES3AF ES3BF
50 100
35 70
50 100
ES3CF
150
105
150
ES3DF ES3EF
200 300
140 210
200 300
ES3GF
400
280
400
ES3JF
600
420
600
UNITS
Volts
Volts
Volts
3.0 Amps
80
26.56
50
16
40
-55 to + 150
Amps
A2S
0C/W
pF
0C
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF
1.0 1.25
5.0
1.0
35
ES3JF UNITS
1.68 Volts
Amps
mAmps
nSec
2019-01/08
REV: O




Rectron

ES3EF Datasheet Preview

ES3EF Datasheet

SUPER FAST SILICON RECTIFIER

No Preview Available !

RATING AND CHARACTERISTICS CURVES (ES3AF THRU ES3JF)
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Note˖1 Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 Single phase half-wave 60 Hz
resistive or inductive load
0.0
25 50 75 100
125
150
175
Case Temperature (qC)
Fig.4 Typical Forward Characteristics
10
TJ=25qC
1.0
0.1
0.01
ES3AF~ES3DF
ES3EF/ES3GF
ES3JF
0.001
0
0.5 1.0 1.5 2.0
Instaneous Forward Voltage (V)
2.5
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
Number of Cycles
100
-1.0
10ns/div
Set time Base for 14ns/div
Fig.3 Typical Reverse Characteristics
1000
800
100
TA=150 qC
TA=125qC
10
TA=75qC
1.0
TA=25qC
0.1
0
20 40 60 80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
TJ=25qC
100
10
TJ=25qC
f = 1.0MHz
Vsig = 50mVp-p
1
0.1
1.0
10
Reverse Voltage (V)
100
" "" "" " "


Part Number ES3EF
Description SUPER FAST SILICON RECTIFIER
Maker Rectron
PDF Download

ES3EF Datasheet PDF





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