RM80N30LD mosfet equivalent, n-channel enhancement mode power mosfet.
ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ G.
General Features
ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
ƽ High density cell design for ul.
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