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Rectron Semiconductor
Rectron Semiconductor

FFM101W Datasheet Preview

FFM101W Datasheet

FAST RECOVERY SILICON RECTIFIER

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FFM101W pdf
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FFM101W
THRU
FFM107W
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
SMX
.110 (2.79)
.086 (2.18)
.209 (5.31)
.185 (4.70)
.071 (1.80)
.051 (1.30)
.011 (0.28)
.007 (0.18)
.180 (4.57)
.160 (4.06)
.091 (2.31)
.067 (1.70)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.059 (1.50)
.035 (0.89)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA = 55oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
FFM101W FFM102W FFM103W FFM104W FFM105W FFM106W FFM107W UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
1.0 Amps
IFSM
30 Amps
(Note 2) RθJL
(Note 3) RθJA
CJ
TJ, TSTG
30
70
15
-55 to + 150
0C/W
0C/W
pF
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at TA =25oC
Maximum DC Reverse Current at
@TA = 25oC
Rated DC Blocking Voltage
@TA = 125oC
VF
IR
Maximum Reverse Recovery Time (Note 4)
trr
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
5.”Fully ROHS compliant”,”100% Sn plating(Pb-free)”.
FFM101W FFM102W FFM103W FFM104W FFM105W FFM106W FFM107W UNITS
1.3 Volts
50 uAmps
5.0 uAmps
100 uAmps
150 250 500 nSec
2005-10



Rectron Semiconductor
Rectron Semiconductor

FFM101W Datasheet Preview

FFM101W Datasheet

FAST RECOVERY SILICON RECTIFIER

No Preview Available !

FFM101W pdf
RATING AND CHARACTERISTIC CURVES ( FFM101W THRU FFM107W )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
.2 Resistive or
Inductive Load
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
10
4
TJ = 100
1.0
.4
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDED Method)
0
1 2 4 6 8 10 20 40 60 80100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10 TJ = 25
Pulse Width = 300us
1% Duty Cycle
1.0
.1
.04
TJ = 25
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.1
.01
.6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
50 10
NONINDUCTIVE NONINDUCTIVE
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES1: Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
+0.5A
0
-0.25A
-1.0A
100
trr 60
40
20
10
TJ = 25
6
4
1cm SET TIME BASE FOR
50/100 ns/cm
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON


Part Number FFM101W
Description FAST RECOVERY SILICON RECTIFIER
Maker Rectron Semiconductor
Total Page 3 Pages
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