* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
* Low Ciss : Ciss = 590 pF TYP.
* Bui.

FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10.

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
* Lo.

22N10

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22-03-2021

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