2SA1069, 1069A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
VCEX(SUS)1
VCEX(SUS)2
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = −3.0 V, IB1 = −0.3 A, L = 1 mH
IC = −3.0 A, IB1 = −IB2 = −0.3 A,
VBE(OFF) = 5.0 V, L = 180 μH, clamped
IC = −6.0 A, IB1 = −0.6 A, IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180 μH, clamped
VCB = −60/−80 V, IE = 0 A
VCE = −60/−80 V, RBE = 51 Ω, TA = 125 °C
VCE = −60/−80 V, VBE(OFF) = 1.5 V
VCE = −60/−80 V, VBE(OFF) = 1.5 V,
TA = 125 °C
VEB = −5.0 V, IC = 0 A
VCE = −5.0 V, IC = −0.3 ANote
VCE = −5.0 V, IC = −0.3 ANote
IC = −3.0 A, IB = −0.3 ANote
IC = −3.0 A, IB = −0.3 ANote
IC = −3.0 A, RL = 17 Ω,
IB1 = −IB2 = −0.3 A, VCC ≅ −50 V
Refer to the test circuit.
Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%
MIN.
−60/−80
−60/−80
−60/−80
40
40
TYP.
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
MAX.
−10
−1.0
−10
−1.0
−10
200
−0.6
−1.5
0.5
2.5
0.5
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Unit
V
V
V
μA
mA
μA
mA
μA
V
V
μs
μs
μs
Base current
waveform
Collector current
waveform
2 Data Sheet D14855EJ3V1DS
