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Renesas Electronics Components Datasheet

2SA1069A Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1069/1069A are the mold power transistors developed for <R> ORDERING INFORMATION
high-speed switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
Part No.
2SA1069
2SA1069A
Package
TO-220AB
(MP-25)
FEATURES
• Low collector saturation voltage
2SA1069-Z
2SA1069A-Z
TO-220SMD
(MP-25Z)
• Fast switching speed
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW 300 μs,
duty cycle 10%
TC = 25°C
TA = 25°C
Ratings
80
60/80
12
5.0
10
Unit
V
V
V
A
A
2.5
30
1.5
150
55 to +150
A
W
W
°C
°C
<R>
(TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14855EJ3V1DS00 (3rd edition)
Date Published January 2010 N
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an ‘‘<R>"
in the PDF file and specifying it in the ‘‘Find what:’’ field.
2002


Renesas Electronics Components Datasheet

2SA1069A Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SA1069, 1069A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
VCEX(SUS)1
VCEX(SUS)2
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = 3.0 V, IB1 = 0.3 A, L = 1 mH
IC = 3.0 A, IB1 = IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180 μH, clamped
IC = 6.0 A, IB1 = 0.6 A, IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180 μH, clamped
VCB = 60/80 V, IE = 0 A
VCE = 60/80 V, RBE = 51 Ω, TA = 125 °C
VCE = 60/80 V, VBE(OFF) = 1.5 V
VCE = 60/80 V, VBE(OFF) = 1.5 V,
TA = 125 °C
VEB = 5.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.3 ANote
VCE = 5.0 V, IC = 0.3 ANote
IC = 3.0 A, IB = 0.3 ANote
IC = 3.0 A, IB = 0.3 ANote
IC = 3.0 A, RL = 17 Ω,
IB1 = IB2 = 0.3 A, VCC ≅ −50 V
Refer to the test circuit.
Note Pulse test PW 350 μs, duty cycle 2%
MIN.
60/80
60/80
60/80
40
40
TYP.
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
MAX.
10
1.0
10
1.0
10
200
0.6
1.5
0.5
2.5
0.5
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Unit
V
V
V
μA
mA
μA
mA
μA
V
V
μs
μs
μs
Base current
waveform
Collector current
waveform
2 Data Sheet D14855EJ3V1DS


Part Number 2SA1069A
Description PNP SILICON EPITAXIAL TRANSISTOR
Maker Renesas
Total Page 6 Pages
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