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Renesas Electronics Components Datasheet

2SA836 Datasheet

Silicon PNP Epitaxial Transistor

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2SA836
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0629-0200
(Previous ADE-208-316)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Ratings
–55
–55
–5
–100
100
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5


Renesas Electronics Components Datasheet

2SA836 Datasheet

Silicon PNP Epitaxial Transistor

No Preview Available !

2SA836
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*1
VCE(sat)
VBE
fT
Cob
NF
Min
–55
–55
–5
160
Note: 1. The 2SA836 is grouped by hFE as follows.
CD
160 to 320 250 to 500
Typ Max
——
——
–0.1
–0.66
200
2.0
1
0.5
–100
–50
500
–0.5
–0.75
5
1
Unit
V
V
(Ta = 25°C)
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
V
nA
nA
V
V
MHz
pF
dB
dB
IE = –10 µA, IC = 0
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
VCE = –12 V, IE = –2 mA
VCB = –10 V, IE = 0, f = 1MHz
VCE = –6 V, f = 10 Hz
IC = –0.1mA, f = 1 kHz
Rg = 10 k
Rev.2.00 Aug 10, 2005 page 2 of 5


Part Number 2SA836
Description Silicon PNP Epitaxial Transistor
Maker Renesas
Total Page 5 Pages
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