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Renesas Electronics Components Datasheet

2SB739 Datasheet

Silicon PNP Epitaxial Transistor

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2SB739
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD787 and 2SD788
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G0650-0200
(Previous ADE-208-1030)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–20
–20
–6
–2
0.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
W
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5


Renesas Electronics Components Datasheet

2SB739 Datasheet

Silicon PNP Epitaxial Transistor

No Preview Available !

2SB739
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–20
V IC = –10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO –20
V IC = –1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
–6
V IE = –10 µA, IC = 0
Collector cutoff current
ICBO — — –2 µA VCB = –16 V, IE = 0
Emitter cutoff current
IEBO — — –0.2 µA VEB = –6 V, IC = 0
DC current transfer ratio
hFE 160 — 320
VCE = –2 V, IC = –0.1 A
Collector to emitter saturation voltage
VCE(sat)
— –0.3 V IC = –1 A, IB = –0.1 A
Gain bandwidth product
fT — 150 — MHz VCE = –2 V, IC = –10 mA
Collector output capacitance
Cob — 50 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5


Part Number 2SB739
Description Silicon PNP Epitaxial Transistor
Maker Renesas
Total Page 6 Pages
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