* Ideal for medium output power amplification
* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* Flat-lead 4-pin thin-type super minimold package ORDE
2SC5753
138.33 KB
Npn silicon rf transistor.
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER M.
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