2SJ552S Overview
High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005.
2SJ552S Key Features
- Low on-resistance RDS (on) = 0.042 Ω typ
- Low drive current
- 4 V gate drive devices
- High speed switching
2SJ552S datasheet by Renesas.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2SJ552S |
|---|---|
| Datasheet | 2SJ552S 2SJ552 Datasheet (PDF) |
| File Size | 89.77 KB |
| Manufacturer | Renesas |
| Description | P-Channel MOSFET |
|
|
|
High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SJ552S | Silicon P-Channel MOSFET | Hitachi Semiconductor | |
| 2SJ552 | Silicon P-Channel MOSFET | Hitachi Semiconductor | |
| 2SJ552L | Silicon P-Channel MOSFET | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
| 2SJ552 | P-Channel MOSFET |
| 2SJ552L | P-Channel MOSFET |
| 2SJ550 | P-Channel MOSFET |
| 2SJ550L | P-Channel MOSFET |
| 2SJ550S | P-Channel MOSFET |
| 2SJ551 | P-Channel MOSFET |
| 2SJ551L | P-Channel MOSFET |
| 2SJ551S | P-Channel MOSFET |
| 2SJ553 | P-Channel MOSFET |
| 2SJ553L | P-Channel MOSFET |