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2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.042 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
D
1 23
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 8
2SJ552(L), 2SJ552(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
2SJ552S Datasheet
