2SK1482 Datasheet - Renesas

N-Channel MOSFET

2SK1482 Features

* Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)

* Voltage drive at logic level (VGS = 4 V) is possible.

* Bidirectional zener diode for protection is incorporated in between the gate and the source.

2SK1482 General Description

The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays. .

2SK1482 Datasheet (131.65 KB)