2SK1485 Datasheet - Renesas

N-Channel MOSFET

2SK1485 Features

* Directly driven by ICs having a 5 V power source.

* Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)

* Complementary to 2SJ199. PACKAGE DRAWING (Unit : mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ±

2SK1485 General Description

The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoi.

2SK1485 Datasheet (111.62 KB)