MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
• Directly driven by ICs having a 5 V power source.
• Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)
RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)
• Complementary to 2SJ199.
PACKAGE DRAWING (Unit : mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
MARK : NC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
5 Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Tstg −55 to +150 °C
Notes1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic board of 16 cm2 × 0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15680EJ3V0DS00 (3rd edition)
(Previous No. TC-2349)
The mark 5 shows major revised points.
Date Published July 2001 NS CP(K)
Printed in Japan