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Renesas Electronics Components Datasheet

2SK1528 Datasheet

Silicon N-Channel MOSFET

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2SK1528(L), 2SK1528(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
REJ03G0951-0200
(Previous: ADE-208-1291)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
G
12
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7


Renesas Electronics Components Datasheet

2SK1528 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

2SK1528(L), 2SK1528(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown voltage V(BR)DSS 900
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
resistance
RDS(on)
3.0
Forward transfer admittance
|yfs|
1.7
2.7
Input capacitance
Ciss
740
Output capacitance
Coss
305
Reverse transfer capacitance
Crss
150
Turn-on delay time
td(on)
15
Rise time
tr
60
Turn-off delay time
td(off)
100
Fall time
tf
80
Body to drain diode forward voltage VDF
0.9
Body to drain diode reverse recovery trr
time
800
Note: 3. Pulse test
Ratings
900
±30
4
10
4
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
4.0
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *3
S
ID = 2 A, VDS = 20 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns RL = 15
ns
ns
V IF = 4 A, VGS = 0
ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7


Part Number 2SK1528
Description Silicon N-Channel MOSFET
Maker Renesas
PDF Download

2SK1528 Datasheet PDF






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