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2SK1835
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
REJ03G0978-0400 Rev.4.00
Jun 04, 2008
D
1 2 3
G S
1. Gate 2. Drain
(Flange) 3. Source
REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6
2SK1835
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2.
2SK1835 Datasheet
