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2SK2570
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D 3 1 2 G 1. Source 2. Gate 3. Drain
S
Note:
Marking is “ZL–”
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2570
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings 20 ±10 0.2 0.
2SK2570 Datasheet
