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Renesas Electronics Components Datasheet

2SK2570 Datasheet

Silicon N Channel MOS FET

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2SK2570
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
Low on-resistance
RDS(on) = 0.8 typ. (VGS = 4 V, ID = 100 mA)
2.5 V gate drive devices.
Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
G
Note: Marking is “ZL–”
REJ03G1019-0200
(Previous: ADE-208-574)
Rev.2.00
Sep 07, 2005
D
1. Source
2. Gate
3. Drain
S
Rev.2.00 Sep 07, 2005 page 1 of 6


Renesas Electronics Components Datasheet

2SK2570 Datasheet

Silicon N Channel MOS FET

No Preview Available !

2SK2570
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW 10 µs, duty cycle 1 %
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
Pch
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes: 2. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min
20
±10
0.5
0.22
Typ
0.8
1.3
0.35
45
33
9.6
20
60
240
140
Ratings
20
±10
0.2
0.4
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
mW
°C
°C
Max
1.0
±5.0
1.5
1.1
2.2
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
(Ta = 25°C)
Test Conditions
ID = 10 µA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 20 V, VGS = 0
VGS = ±6.5 V, VDS = 0
ID = 10 µA, VDS = 5 V
ID = 100 mA, VGS = 4 V *2
ID = 40 mA, VGS = 2.5 V *2
ID = 100 mA, VDS = 10 V *2
VDS = 10 V, VGS = 0,
f = 1 MHz
VGS = 5 V, ID = 100 mA,
RL = 100
Rev.2.00 Sep 07, 2005 page 2 of 6


Part Number 2SK2570
Description Silicon N Channel MOS FET
Maker Renesas
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2SK2570 Datasheet PDF






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