• Part: 2SK2788
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 76.32 KB
Download 2SK2788 Datasheet PDF
Renesas
2SK2788
Features - Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A) - Low drive current - High speed switching - 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 21 3 Preliminary Datasheet R07DS0511EJ0300 (Previous: REJ03G1033-0200) Rev.3.00 Jul 27, 2011 1. Gate 2. Drain 3. Source 4. Drain Note: Marking is “VY” Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)- 1 IDR Pch- 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  100 s, duty cycle  10 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 60 20 2 4 2 1 150 - 55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0511EJ0300 Rev.3.00 Jul 27, 2011 Page 1 of...