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2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1039-0500 (Previous: ADE-208-454B)
Rev.5.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4
D
G 12 3
1
23
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2925(L),2SK2925(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
2SK2925S Datasheet
