Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005
Features
- Low on-resistance RDS =0.026 Ω typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
1. Gate 2. Drain 3. Source
2 3
Rev.4.00 Sep 07, 2005 page 1 of 7
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