Datasheet4U Logo Datasheet4U.com

2SK4146 - MOSFET

Description

The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A).
  • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4146 N-Channel MOSFET Transistor Inchange Semiconductor
2SK414 N-Channel MOSFET Transistor Inchange Semiconductor
2SK414 SILICON N-CHANNEL MOSFET ETC
2SK4143 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK4143 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK4144 N-CHANNEL POWER MOSFET
2SK4147 N-CHANNEL MOSFET
2SK4069 N-CHANNEL POWER MOSFET
2SK4090 MOSFET
2SK4091 MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
Published: |