84N06CLD Overview
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
84N06CLD Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance
- Built-in gate protection diode
84N06CLD Datasheet Details
| Part number | 84N06CLD |
|---|---|
| Datasheet | 84N06CLD-Renesas.pdf |
| File Size | 122.22 KB |
| Manufacturer | Renesas |
| Description | N-CHANNEL POWER MOS FET |
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