* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A.

FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 1.

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = .

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840002I

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