AB1A3M - on-chip resistor NPN transistor

Renesas

Download the AB1A3M datasheet PDF. This datasheet also covers the AB1A4A variant, as both devices belong to the same on-chip resistor npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Current drive available up to 0.7 A.
On-chip bias resistor.
Low power consumption during drive.

📥 Download Datasheet

AB1A3M on-chip resistor npn transistor by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AB1A4A-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AB1A3M
Manufacturer	Renesas
File Size	150.97 KB
Description	on-chip resistor NPN transistor
Datasheet	AB1A3M Datasheet

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Other Datasheets by Renesas

Part Number	Description
AB1A4A	on-chip resistor NPN transistor
AB1A4M	on-chip resistor NPN transistor
AB1F3P	on-chip resistor NPN transistor
AB1J3P	on-chip resistor NPN transistor
AB1L2Q	on-chip resistor NPN transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET COMPOUND TRANSISTOR AB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive PACKAGE DRAWING (UNIT: mm) AB1 SERIES LISTS Products AB1A4A AB1L2Q AB1A3M AB1F3P AB1J3P AB1L3N AB1A4M R1 (KΩ) − 0.47 1.0 2.2 3.3 4.7 10 R2 (KΩ) 10 4.7 1.0 10 10 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 0.7 A Collector current (Pulse) IC(pulse) * 1.0 A Base current (DC) IB(DC) 0.