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DATA SHEET
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
AB1 SERIES LISTS
Products AB1A4A AB1L2Q AB1A3M AB1F3P AB1J3P AB1L3N AB1A4M
R1 (KΩ) −
0.47 1.0 2.2 3.3 4.7 10
R2 (KΩ) 10 4.7 1.0 10 10 10 10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
0.