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Renesas Electronics Components Datasheet

B1572 Datasheet

2SB1572

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DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
Low VCE(sat): VCE(sat)1 ≤ −0.4 V
Complementary to 2SD2403
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
80
Collector to Emitter Voltage
VCEO
60
Emitter to Base Voltage
VEBO
6.0
Collector Current (DC)
Collector Current (pulse) Note1
IC(DC)
IC(pulse)
3.0
5.0
Base Current (DC)
Base Current (pulse) Note1
Total Power Dissipation Note2
IB(DC)
IB(pulse)
PT
0.2
0.4
2.0
Junction Temperature
Tj 150
Storage Temperature Range
Tstg –55 to + 150
Notes 1. PW 10 ms, Duty Cycle 50%
2. When mounted on ceramic substrate of 16 cm2 x 0.7 mm
V
V
V
A
A
A
A
W
°C
°C
PACKAGE DRAWING (Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
C
EB
0.42
±0.06
1.5 0.47
±0.06
3.0
0.42
±0.06
E: Emitter
C: Collector (Fin)
B: Base
0.41
+0.03
–0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO VCB = 80 V, IE = 0
Emitter Cut-off Current
DC Current Gain Note
IEBO VEB = 6.0 V, IC = 0
hFE1 VCE = 2.0 V, IC = 0.1 A
Base to Emitter Voltage Note
Collector Saturation Voltage Note
Collector Saturation Voltage Note
Base Saturation Voltage Note
hFE2
VBE
VCE(sat)1
VCE(sat)2
VBE(sat)
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 0.1 A
IC = 2.0 A, IB = 0.1 A
IC = 3.0 A, IB = 0.15 A
IC = 2.0 A, IB = 0.1 A
Gain Bandwidth Product
fT VCE = 10 V, IE = 0.3 A
Output Capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Turn-on Time
ton IC = 1.0 A, VCC = 10 V,
Storage Time
tstg RL = 5.0 , IB1 = IB2 = 0.1 A,
Fall Time
tf
Note Pulsed: PW 350 µs, Duty Cycle 2%
MIN.
80
100
0.63
TYP.
200
0.685
0.2
0.3
0.89
160
45
155
510
35
MAX.
100
100
400
0.73
0.4
0.6
1.2
UNIT
nA
nA
V
V
V
V
MHz
pF
ns
ns
ns
hFE CLASSFICATION
Marking
HX
hFE2 100 to 200
HY
160 to 320
HZ
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11204EJ3V0DS00 (3rd edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001


Renesas Electronics Components Datasheet

B1572 Datasheet

2SB1572

No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 30 60 90 120 150
TA - Ambient Temperature - ˚C
2SB1572
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
0.5
100 ms
DC
0.2
TA = 25˚C
Single Pulse
0.1
1 2
5 10 20
50
VCE - Collector to Emitter Voltage - V
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
1.6
40
mA
30
mA
20
mA
1.2
IB = 10 mA
0.8
0.4
0 0.2 0.4 0.6 0.8 1.0
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
VCE = 2 V
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
300
500 700
900 1100
VBE - Base to Emitter Voltage - mV
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
VCE = 2 V
TA = 125˚C
100 75˚C
25˚C
0˚C
25˚C
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC - Collector Current - A
5 10
1000
500
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
.IC = 20 IB
200
TA = 125˚C
100
75˚C
50 25˚C
20
0˚C
10 25˚C
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC - Collector Current - A
5 10
2 Data Sheet D11204EJ3V0DS


Part Number B1572
Description 2SB1572
Maker Renesas
Total Page 4 Pages
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