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Renesas Electronics Components Datasheet

BCR16PM-12L Datasheet

Triac

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BCR16PM-12L
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGT: 30 mA (20 mA)Note5
Viso : 1500 V
Outline
TO-220F
12 3
REJ03G0306-0100
Rev.1.00
Aug.20.2004
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV
sets, refrigerator, washing machine, electric fan, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.1.00, Aug.20.2004, page 1 of 14


Renesas Electronics Components Datasheet

BCR16PM-12L Datasheet

Triac

No Preview Available !

BCR16PM-12L
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
16
160
106.5
5.0
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 71°C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
Ι
VFGTΙ
ΙΙ
VRGTΙ
ΙΙΙ
VRGTΙΙΙ
Gate trigger currentNote2
Ι
IFGTΙ
ΙΙ
IRGTΙ
ΙΙΙ
IRGTΙΙΙ
Gate non-trigger voltage
VGD
0.2
Thermal resistance
Rth (j-c)
Critical-rate of rise of off-state
commutating voltageNote4
(dv/dt)c
10
2.0
mA Tj = 125°C, VDRM applied
1.5
V
Tc = 25°C, ITM = 25 A,
Instantaneous measurement
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 ,
1.5
V
RG = 330
1.5
V
30Note5
mA Tj = 25°C, VD = 6 V, RL = 6 ,
30Note5
mA RG = 330
30Note5
mA
V
Tj = 125°C, VD = 1/2 VDRM
3.0
°C/W Junction to caseNote3
V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 20mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.1.00, Aug.20.2004, page 2 of 14



Part Number BCR16PM-12L
Description Triac
Maker Renesas
Total Page 3 Pages
PDF Download

BCR16PM-12L Datasheet PDF





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