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Renesas Electronics Components Datasheet

BCR16PM-14LJ Datasheet

Triac

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BCR16PM-14LJ
700V - 16A - Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 800 V (Tj =125 °C)
Tj: 150 °C
IFGTI, IRGTI, IRGT: 30 mA
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
Preliminary Datasheet
R07DS0958EJ0200
Rev.2.00
Mar 01, 2013
Viso: 2000 V
Insulated Type
Planar Passivation Type
UL Recognized: File No. E223904
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit
V
V
Conditions
Tj = 125C
Tj = 150C
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
16
160
106.5
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, Tc = 87C
A
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
V
Ta = 25C, AC 1 minute
T1 T2 G terminal to case
R07DS0958EJ0200 Rev.2.00
Mar 01, 2013
Page 1 of 7


Renesas Electronics Components Datasheet

BCR16PM-14LJ Datasheet

Triac

No Preview Available !

BCR16PM-14LJ
Preliminary
Electrical Characteristics
Parameter
Rated value
Symbol
Unit
Min. Typ. Max.
Test conditions
Repetitive peak off-state current
IDRM
2.0
mA Tj = 150C, VDRM applied
On-state voltage
VTM
1.5
V
Tc = 25C, ITM = 25A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
1.5

VRGT
1.5
V
Tj = 25C, VD = 6 V, RL = 6 ,
V
RG = 330
Gate trigger curentNote2
 VRGT
IFGT

IRGT
1.5
30
30
V
mA Tj = 25C, VD = 6 V, RL = 6 ,
mA RG = 330

IRGT
30
mA
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
Thermal resistance
0.1
Tj = 150C, VD = 1/2 VDRM
Rth (j-c)
3.5
C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c 10
V/s Tj = 125C
commutation voltageNote4
1
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0958EJ0200 Rev.2.00
Mar 01, 2013
Page 2 of 7



Part Number BCR16PM-14LJ
Description Triac
Maker Renesas
Total Page 3 Pages
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BCR16PM-14LJ Datasheet PDF





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