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Renesas Electronics Components Datasheet

BCR1AM-14A Datasheet

Triac

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BCR1AM-14A
700V-1A-Triac
Low Power Use
Preliminary Datasheet
R07DS1076EJ0300
Rev.3.00
Aug 25, 2015
Features
IT (RMS) : 1 A
VDRM :700 V
IFGTI : 5 mA
IRGTI, IRGTIII : 5 mA or 3mA(IGT item:1)
IFGTIII : 10 mA
Outline
Non-Insulated Type
Planar Passivation Type
RoHS Compliant
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A)
RENESAS Package code: PRSS0003EA-A RENESAS Package code: PRSS0003DJ-A
(Package name: TO-92*)
(Package name: TO-92)
13 2
13 2
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
Applications
Washing machine, electric fan, air purifier, electric pot, rice-cooker, electric blanket, refrigerator, Solid State Relay,
and other general purpose AC control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non- repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
14
700
840
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
1.0
10
0.41
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, , Tc= 56CNote3
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
R07DS1076EJ0300 Rev.3.00
Aug 25, 2015
Page 1 of 7


Renesas Electronics Components Datasheet

BCR1AM-14A Datasheet

Triac

No Preview Available !

BCR1AM-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
BCR1AM-14A-1
(IGT item : 1)
Min. Typ. Max.
— — 0.5
On-state voltage
VTM
— 1.6
Gate trigger voltageNote2
I
VFGT
II
VRGT
III VRGT
— 2.0
— 2.0
— 2.0
BCR1AM-14A
Unit Test conditions
Min.
Typ.
Max.
0.5
1.6
2.0
2.0
2.0
mA Tj = 125C
VDRM applied
V Tc = 25C, ITM = 1.5 A
instantaneous
measurement
V Tj = 25C, VD = 6 V
V RL = 6 , RG = 330
V
Gate trigger curentNote2
IV VFGT
— 2.0
— 2.0 V
I
IFGT
5
——
5 mA Tj = 25C, VD = 6 V
II
IRGT
3
——
5 mA RL = 6 , RG = 330
III IRGT
3
——
5 mA
IV IFGT
10
10 mA
Gate non-trigger voltage
Thermal resistance
VGD 0.1
0.1
V Tj = 125C
VD = 1/2 VDRM
Rth (j-c)
50
50 C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 1.0 —
— 2.0 —
— V/s Tj = 125C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1076EJ0300 Rev.3.00
Aug 25, 2015
Page 2 of 7



Part Number BCR1AM-14A
Description Triac
Maker Renesas
Total Page 3 Pages
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