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Renesas Electronics Components Datasheet

BCR1BM-16A Datasheet

Triac

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BCR1BM-16A
800V - 1A - Triac
Low Power Use
Preliminary Datasheet
R07DS0967EJ0001
Rev.0.01
Nov 28, 2012
Features
IT (RMS) : 1 A
VDRM : 800 V (Tj = 125C)
IFGTI, IRGTI, IRGTIII : 15 mA
Tj: 125 °C
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
d (Package name: TO-92)
ende n 12 3
1
2
3
1. T2 Terminal
2. Gate Terminal
3. T1 Terminal
m ig Applications
s Washing machine, electric fan, air cleaner, other general purpose control applications
m e Maximum Ratings
o D Parameter
c Repetitive peak off-state voltageNote1
Symbol
VDRM
Voltage class
16
800
Unit
V
e w Parameter
R e RMS on-state current
t N Surge on-state current
o r I2t for fusing
N fo Peak gate power dissipation
Symbol
IT (RMS)
ITSM
I2t
PGM
Ratings
1
8
0.26
1
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 49°C
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
W
Average gate power dissipation
PG (AV)
0.1
W
Peak gate voltage
VGM
6
V
Peak gate current
IGM
0.5
A
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Mass
0.23
g
Typical value
R07DS0967EJ0001 Rev.0.01
Nov 28, 2012
Page 1 of 3


Renesas Electronics Components Datasheet

BCR1BM-16A Datasheet

Triac

No Preview Available !

BCR1BM-16A
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
1.0
mA Tj = 125°C, VDRM applied
On-state voltage
VTM
2.0
V
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
2.0
V
Tj = 25°C, VD = 6 V, RL = 6 ,

VRGT
2.0
V
RG = 330

VRGT
2.0
V
Gate trigger currentNote2
IFGT
15
mA Tj = 25°C, VD = 6 V, RL = 6 ,

IRGT
15
mA RG = 330

IRGT
15
mA
Gate non-trigger voltage
VGD
0.1
V
Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
50
°C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
0.5
V/s Tj = 125°C
commutating voltageNote4
d Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
e 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
d 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
en n Test conditions
m ig 1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
s (di/dt)c = – 0.5 A/ms
m e 3. Peak off-state voltage
Not RfoercNoew D VD=400V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0967EJ0001 Rev.0.01
Nov 28, 2012
Page 2 of 3



Part Number BCR1BM-16A
Description Triac
Maker Renesas
Total Page 3 Pages
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