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Renesas Electronics Components Datasheet

BCR25CM-12LB Datasheet

Triac

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BCR25CM-12LB
600V - 25A - Triac
Medium Power Use
Features
IT (RMS) : 25 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III: 50 mA
Data Sheet
R07DS1152EJ0200
Rev.2.00
Sep. 11, 2018
Tj: 150 °C
Non-insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AT-A
(Package name: TO-220ABA)
4
123
123
2, 4
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3 4. T2 Terminal
1
Application
Motor control, Heater control, Power supply, Solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
IT (RMS)
Ratings
25
ITSM
250
I2t
313
PGM
PG (AV)
VGM
IGM
Tj
Tstg
5
0.5
10
2
40 to +150
40 to +150
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, Tc = 115CNote3
A
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
W
W
V
A
C
C
R07DS1152EJ0200 Rev.2.00
Sep. 11, 2018
Page 1 of 8


Renesas Electronics Components Datasheet

BCR25CM-12LB Datasheet

Triac

No Preview Available !

BCR25CM-12LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
Gate trigger voltageNote2
Gate trigger currentNote2
VFGT
 VRGT
 VRGT
IFGT

IRGT
 IRGT
Typ.
Max.
3.0
5.0
1.5
2.0
2.0
2.0
50
50
50
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 125C, VDRM applied
Tj = 150C, VDRM applied
Tc = 25C, ITM = 40 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
0.1
Tj = 150C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
1.1
C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state (dv/dt)c 10
V/s Tj = 125C
commutation voltageNote5
1
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = 13 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS1152EJ0200 Rev.2.00
Sep. 11, 2018
Page 2 of 8


Part Number BCR25CM-12LB
Description Triac
Maker Renesas
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