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Renesas Electronics Components Datasheet

BCR25FM-12LB Datasheet

Triac

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BCR25FM-12LB
600V - 25A - Triac
Medium Power Use
Features
IT (RMS): 25 A
VDRM: 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGT III: 50 mA
Data Sheet
R07DS0964EJ0300
Rev.3.00
May 31, 2018
Insulated Type
Planar Passivation Type
Viso: 2000 V
Outline
RENESAS Package code: PRSS0003AG-A RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FP)
(Package name: TO-220FPA)
12 3
123
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
Application
Contactless AC switch, electric heater control, Printer, Copier and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage Note6
Notes: 1. Gate open.
Symbol
IT (RMS)
Ratings
25
ITSM
250
I2t
313
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
5
0.5
10
2
40 to +150
40 to +150
2000
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, Tc = 62 C
A
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
W
W
V
A
C
C
V
Ta=25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 1 of 8


Renesas Electronics Components Datasheet

BCR25FM-12LB Datasheet

Triac

No Preview Available !

BCR25FM-12LB
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
Gate trigger voltageNote2
Gate trigger curentNote2
VFGT
 VRGT
 VRGT
IFGT

IRGT
 IRGT
Typ.
Max.
3.0
5.0
1.5
2.0
2.0
2.0
50
50
50
Unit
mA
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 125C, VDRM applied
Tj = 150C, VDRM applied
Tc = 25C, ITM = 40A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
0.1
Tj = 150C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
2.8
C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 10
V/s Tj = 125C
commutation voltageNote4
1
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125 °C / 150 °C
2. Rate of decay of on-state commutating current
(di/dt)c = 13 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS0964EJ0300 Rev.3.00
May 31, 2018
Page 2 of 8


Part Number BCR25FM-12LB
Description Triac
Maker Renesas
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