datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

BCR25RM-12LB Datasheet

Triac

No Preview Available !

BCR25RM-12LB pdf
BCR25RM-12LB
Triac
Medium Power Use
Features
IT (RMS) : 25 A
VDRM: 600 V
IFGTI, IRGTI, IRGTIII: 50 mA
Viso: 2000 V
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
REJ03G1715-0100
Rev.1.00
Jul 10, 2008
The product guaranteed maximum junction
temperature of 150°C
Insulated Type
Planar Type
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltage Note1
Non-repetitive peak off-state voltage Note1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 1 of 7


Renesas Electronics Components Datasheet

BCR25RM-12LB Datasheet

Triac

No Preview Available !

BCR25RM-12LB pdf
BCR25RM-12LB
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
25
Surge on-state current
I2t for fusion
ITSM
250
I2t 313
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
5
0.5
10
2
–40 to +150
–40 to +150
5.2
2000
Unit Conditions
A Commercial frequency, sine full wave 360°
conduction, Tc = 96°C
A 50 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave 50
Hz, surge on-state current
W
W
V
A
°C
°C
g Typical value
V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
— 3.0/5.0 mA Tj = 125°C /150°C, VDRM applied
— 1.5
V Tc = 25°C, ITM = 40 A,
instantaneous measurement
— 2.0
— 2.0
V Tj = 25°C, VD = 6 V, RL = 6 ,
V RG = 330
— 2.0
V
— 50 mA Tj = 25°C, VD = 6 V, RL = 6 ,
— 50 mA RG = 330
— 50 mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125°C /150°C, VD = 1/2 VDRM
1.7 °C/W Junction to caseNote3
— V/µs Tj = 125°C /150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 2 of 7


Part Number BCR25RM-12LB
Description Triac
Maker Renesas
Total Page 10 Pages
PDF Download
BCR25RM-12LB pdf
BCR25RM-12LB Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 BCR25RM-12LB Triac Renesas
Renesas
BCR25RM-12LB pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy