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Renesas Electronics Components Datasheet

BCR5AM-12LA Datasheet

Triac

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BCR5AM-12LA
Triac
Medium Power Use
Features
IT(RMS) : 5 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
Outline
REJ03G0293-0300
Rev.3.00
Nov 30, 2007
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G0293-0300 Rev.3.00 Nov 30, 2007
Page 1 of 6


Renesas Electronics Components Datasheet

BCR5AM-12LA Datasheet

Triac

No Preview Available !

BCR5AM-12LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT(RMS)
ITSM
I2t
PGM
PG(AV)
VGM
IGM
Tj
Tstg
Ratings
5
50
10.4
3
0.3
10
2
– 40 to +125
– 40 to +125
2.0
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 103°CNote3
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
I
VFGT I
II
VRGT I
III
VRGT III
Gate trigger currentNote2
I
IFGT I
II
IRGT I
III
IRGT III
Gate non-trigger voltage
VGD
0.2
Thermal resistance
Rth(j-c)
Critical-rate of rise of off-state
commutating voltageNote5
(dv/dt)c
5
2.0
mA Tj = 125°C, VDRM applied
1.8
V
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
1.5
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 ,
V
RG = 330
1.5
V
20Note6
mA Tj = 25°C, VD = 6 V, RL = 6 ,
20Note6
mA RG = 330
20Note6
mA
V
Tj = 125°C, VD = 1/2 VDRM
3.0
°C/W Junction to caseNote3 Note4
V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G0293-0300 Rev.3.00 Nov 30, 2007
Page 2 of 6



Part Number BCR5AM-12LA
Description Triac
Maker Renesas
Total Page 3 Pages
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