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Renesas Electronics Components Datasheet

CR5AS-12 Datasheet

Thyristor

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CR5AS-12
Thyristor
Medium Power Use
Features
IT (AV) : 5 A
VDRM : 600 V
IGT : 100 µA
Outline
Lead Mounted Type
Non-Insulated Type
Glass Passivation Type
REJ03G0346-0200
Rev.2.00
Apr.05.2005
RENESAS Package code: PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
1
23
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Symbol
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Rev.2.00, Apr.05.2005, page 1 of 7


Renesas Electronics Components Datasheet

CR5AS-12 Datasheet

Thyristor

No Preview Available !

CR5AS-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Surge on-state current
I2t for fusing
ITSM
90
I2t 33
Peak gate power dissipation
PGM
0.5
Average gate power dissipation
PG (AV)
0.1
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.3
Junction temperature
Tj – 40 to +125
Storage temperature
Tstg – 40 to +125
Mass
— 0.26
Notes: 1. With gate to cathode resistance RGK = 220 .
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
2.0 mA Tj = 125°C, VRRM applied,
RGK = 220
Repetitive peak off-state current
IDRM
2.0 mA Tj = 125°C, VDRM applied,
RGK = 220
On-state voltage
VTM — — 1.8 V Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
Gate trigger current
VGD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM,
RGK = 220
IGT 1 — 100Note3 µA Tj = 25°C, VD = 6 V, IT = 0.1 A
Holding current
Thermal resistance
IH — 3.5 — mA Tj = 25°C, VD = 12 V,
RGK = 220
Rth (j-c)
— 3.0 °C/W Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50 40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 resistance between the gate and
cathode.
Rev.2.00, Apr.05.2005, page 2 of 7


Part Number CR5AS-12
Description Thyristor
Maker Renesas
PDF Download

CR5AS-12 Datasheet PDF






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