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Renesas Electronics Components Datasheet

CR5AS-12A Datasheet

Thyristor

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CR5AS-12A
600V - 5A - Thyristor
Medium Power Use
Features
IT (AV) : 5 A
VDRM : 600 V
IGT: 100 A
Data Sheet
R07DS0332EJ0301
Rev.3.01
May. 10, 2019
Planar Passivation Type
RoHS Compliant
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
12 3
2, 4
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
12 3
Application
Switching mode power supply, igniter, pulse generator, electric tools, etc.
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Non-repetitive peak reverse voltage
VRSM
DC reverse voltage
VR(DC)
Repetitive peak off-state voltage Note1
VDRM
DC off-state voltage Note1
VD(DC)
Notes: 1. With gate to cathode resistance RGK=220
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
R07DS0332EJ0301 Rev.3.01
May. 10, 2019
Page 1 of 8


Renesas Electronics Components Datasheet

CR5AS-12A Datasheet

Thyristor

No Preview Available !

CR5AS-12A
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
ITSM
90
I2t
33
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
0.5
0.1
6
6
0.3
40 to +125
40 to +125
Data Sheet
Unit
Conditions
A
A
Commercial frequency, sine half wave
180conduction, Ta = 88C
A
60 Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
V
A
C
C
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
1.0
mA Tj = 125C, VRRM applied,
RGK = 220
Repetitive peak off-state current IDRM
1.0
mA Tj = 125C, VDRM applied,
RGK = 220
On-state voltage
VTM
1.8
V
Tc = 25C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT
0.8
V
Tj = 25C, VD = 6 V,
IT = 0.1 A
Gate non-trigger voltage
VGD
0.1
V
Tj = 125C, VD = 1/2 VDRM,
Gate trigger current
IGT
1 Note3
RGK = 220
100 Note3
A
Tj = 25C, VD = 6 V,
IT = 0.1 A
Holding current
IH
3.5
mA Tj = 25C, VD = 12 V,
Thermal resistance
Rth (j-c)
RGK = 220
3.0
C/W Junction to case Note2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, please refer to the ordering information.
The above values do not include the current flowing through the 220 resistance between the gate and
cathode.
R07DS0332EJ0301 Rev.3.01
May. 10, 2019
Page 2 of 8



Part Number CR5AS-12A
Description Thyristor
Maker Renesas
Total Page 3 Pages
PDF Download

CR5AS-12A Datasheet PDF





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