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Renesas Electronics Components Datasheet

D667 Datasheet

Silicon NPN Transistor

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2SD667, 2SD667A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB647/A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G0769-0200
(Previous ADE-208-1137)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
2SD667
120
80
5
1
2
0.9
150
–55 to +150
2SD667A
120
100
5
1
2
0.9
150
–50 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5


Renesas Electronics Components Datasheet

D667 Datasheet

Silicon NPN Transistor

No Preview Available !

2SD667, 2SD667A
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
DC current transfer ratio
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE1*1
2SD667
Min Typ Max
120 —
80 — —
5 ——
— — 10
60 — 320
2SD667A
Min Typ Max
120 —
100 —
5 ——
— — 10
60 — 200
hFE2 30 — — 30 — —
Collector to emitter
saturation voltage
VCE(sat)
1
——
1
Base to emitter voltage VBE — — 1.5 — — 1.5
Gain bandwidth product
fT
— 140 —
— 140 —
Collector output
Cob — 12 — —
capacitance
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.
2. Pulse test
B CD
2SD667
60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200
12
(Ta = 25°C)
Unit Test conditions
V IC = 10 µA, IE = 0
V IC = 1 mA, RBE =
V IE = 10 µA, IC = 0
µA
V
V
MHz
pF
VCB = 100 V, IE = 0
VCE = 5 V,
IC = 150 mA*2
VCE = 5 V,
IC = 500 mA*2
IC = 500 mA,
IB = 50 mA*2
VCE = 5 V,
IC = 150 mA*2
VCE = 5 V,
IC = 150 mA*2
VCB = 10 V, IE = 0,
f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5


Part Number D667
Description Silicon NPN Transistor
Maker Renesas
PDF Download

D667 Datasheet PDF






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