H5N2901FL-M0 Overview
H5N2901FL-M0 290V - 18A - MOS FET High Speed Power Switching.
H5N2901FL-M0 Key Features
- Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching
- Built-in fast recovery diode