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H5N2901FL-M0 - MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.07  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching.
  • Built-in fast recovery diode Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H5N2901FL-M0 290V - 18A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.07  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. STch = 25C, Tch  150C 3.