Full PDF Text Transcription for H5N5015P (Reference)
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H5N5015P. For precise diagrams, and layout, please refer to the original PDF.
H5N5015P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Built-in fast ...
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kage current • High speed switching • Low gate charge • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1117-0100 (Previous: ADE-208-1522) Rev.1.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.1.00 Sep 07, 2005 page 1 of 6 H5N5015P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs,
H5N5015P Datasheet
