Download the HAF2021S datasheet PDF.
This datasheet also covers the HAF2021 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
This FET has the over temperature shut
down capability sensing to the junction temperature.
in over temperature shut
down circuit in the gate area.
down the gate voltage in case of high junction temperature lik
Key Features
Logic level operation (6 V Gate drive).
High endurance capability against to the short circuit.
Built.
in the over temperature shut.
down circuit.
Latch type shut.
down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature Sensing Circuit
www. DataSheet4U. com
Latch Circuit
Gate Shut-down Circuit
S
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8
HAF2021(L), HAF202.
Full PDF Text Transcription for HAF2021S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HAF2021S. For precise diagrams, and layout, please refer to the original PDF.
HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.2004 Description This FET has the ove...
View more extracted text
DE-208-1459A(Z)) Rev.2.00 Mar.05.2004 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature
HAF2021S Datasheet
