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HAF2027L - Silicon N-Channel Power MOSFET Power Switching

Download the HAF2027L datasheet PDF. This datasheet also covers the HAF2027 variant, as both devices belong to the same silicon n-channel power mosfet power switching family and are provided as variant models within a single manufacturer datasheet.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery) Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAF2027_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAF2027L
Manufacturer Renesas
File Size 151.99 KB
Description Silicon N-Channel Power MOSFET Power Switching
Datasheet download datasheet HAF2027L Datasheet

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Technology Logo HAF2027 Silicon N-Channel Power MOSFET Power Switching Renesas Technology

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.00 May 19, 2008 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..