Datasheet Summary
Silicon P Channel Power MOS FET Power Switching
Features
- Low on-resistance
- Low drive current
- High density mounting
- 2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
REJ03G1151-0600 (Previous: ADE-208-754D)
Rev.6.00 Sep 07, 2005
1 256 D DDD
S 4
4 3 1, 2, 5, 6
Source Gate Drain
Rev.6.00 Sep 07, 2005 page 1 of...
