HIP2060 Datasheet | Renesas

Features - Two 10A Power MOS N-Channel Transistors - Output Voltage to 60V - r DS(ON) - 0.135 Max Per Transistor at VGS = 15V - r DS(ON) - . 0.15 Max Per Transistor at VGS = 10V - Pulsed Current - - - 25A Each Transistor - Avalanche Energy- - . 100m J Each Transistor - Grounded Tab Eliminates Heat Sink Isolation Ordering Information TEMP. PART NUMBER RANGE (o C) PACKAGE PKG. NO. HIP2060AS1 -40 to 125 5 Ld SIP Z5.067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5.067A HIP2060AS3 -40 to 125 5 Ld SIP Z5.067B NOTE: When ordering use the entire part number. FN3983 Rev 5.00 April 1998 Description The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness. The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier. Symbol DRAIN1 5 GATE1 1 Z1 GATE2 2 Z2 SOURCE2 3, TAB D1 SOURCE1 = DRAIN2...