HZ9A1-N - Silicon Planar Zener Diode

Renesas

Datasheet Details

Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible.

📁 HZ9A1-N Similar Datasheet

HZ9 - Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply (Hitachi Semiconductor)
HZ9.1BP - Silicon Epitaxial Planar Zener Diodes (Hitachi)
HZ9.1CP - Silicon Epitaxial Planar Zener Diodes (Hitachi)
HZ9B2 - SILICON EPITAXIAL PLANER ZENER DIODES (SEMTECH)
HZ9B3 - SILICON EPITAXIAL PLANER ZENER DIODES (SEMTECH)
HZ9C1 - SILICON EPITAXIAL PLANER ZENER DIODES (SEMTECH)
HZ9C2 - SILICON EPITAXIAL PLANER ZENER DIODES (SEMTECH)
HZ9C3 - SILICON EPITAXIAL PLANER ZENER DIODES (SEMTECH)

Other Datasheets by Renesas

Published: Jan 19, 2020 |