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Renesas Electronics Components Datasheet

HZS36 Datasheet

Silicon Epitaxial Planar Zener Diode

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HZS Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0184-0300Z
(Previous: ADE-208-120B)
Rev.3.00
Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS Series
Pin Arrangement
Mark
Type No.
Package Code
MHD
B
12
2
Type No.
Cathode band
1. Cathode
2. Anode
Rev.3.00, Mar.11.2004, page 1 of 6


Renesas Electronics Components Datasheet

HZS36 Datasheet

Silicon Epitaxial Planar Zener Diode

No Preview Available !

HZS Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*1
Min
HZS2 A1
1.6
A2 1.7
A3 1.8
B1 1.9
B2 2.0
B3 2.1
C1 2.2
C2 2.3
C3 2.4
HZS3 A1
2.5
A2 2.6
A3 2.7
B1 2.8
B2 2.9
B3 3.0
C1 3.1
C2 3.2
C3 3.3
HZS4 A1
3.4
A2 3.5
A3 3.6
B1 3.7
B2 3.8
B3 3.9
C1 4.0
C2 4.1
C3 4.2
HZS5 A1
4.3
A2 4.4
A3 4.5
B1 4.6
B2 4.7
B3 4.8
Note: 1. Tested with DC.
Max
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
Test
Condition
IZ (mA)
5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
25 0.5
(Ta = 25°C)
Dynamic Resistance
rd ()
Test
Condition
Max
IZ (mA)
100 5
5 5 0.5 100 5
5 5 0.5 100 5
5 5 1.0 100 5
5 5 1.5 100 5
Rev.3.00, Mar.11.2004, page 2 of 6


Part Number HZS36
Description Silicon Epitaxial Planar Zener Diode
Maker Renesas
Total Page 7 Pages
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