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Renesas Electronics Components Datasheet

IDTQS3VH125 Datasheet

HIGH BANDWIDTH BUS SWITCH

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IDTQS3VH125
2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH® PRODUCTS
2.5V / 3.3V QUAD ACTIVE LOW,
HIGH BANDWIDTH BUS SWITCH
IDTQS3VH125
FEATURES:
• N channel FET switches with no parasitic diode to VCC
– Isolation under power-off conditions
– No DC path to VCC or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low RON - 4Ω typical
• Flat RON characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent RON matching between channels
• VCC operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP and SOIC packages
APPLICATIONS:
• Hot-swapping
• 10/100 Base-T, Ethernet LAN switch
• Low distortion analog switch
• Replaces mechanical relay
• ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The QS3VH125 is a high bandwidth, Quad bus switch. The QS3VH125
has very low ON resistance, resulting in under 250ps propagation delay
through the switch. The switches can be turned ON under the control
of individual LVTTL-compatible active low Output Enable signals for
bidirectional data flow with no added delay or ground bounce. In the ON
state, the switches can pass signals up to 5V. In the OFF state, the
switches offer very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF imped-
ance, and over-voltage tolerance makes the QS3VH125 ideal for high
performance communications applications.
The QS3VH125 is characterized for operation from -40°C to +85°C.
1A 2A 3A 4A
1OE
2OE
3OE
4OE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
c 2013 Integrated Device Technology, Inc.
1Y 2Y 3Y 4Y
JANUARY 2013
1
DSC-5597/11


Renesas Electronics Components Datasheet

IDTQS3VH125 Datasheet

HIGH BANDWIDTH BUS SWITCH

No Preview Available !

IDTQS3VH125
2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH
PIN CONFIGURATION
NC 1
1OE 2
1A
3
1Y
4
2OE 5
2A
6
2Y
7
GND 8
16
VCC
15 4OE
14 4A
13 4Y
12 3OE
11 3A
10 3Y
9 NC
QSOP
TOP VIEW
1OE 1
1A
2
1Y
3
2OE 4
2A
5
2Y
6
GND 7
14
VCC
13
4OE
12
4A
11
4Y
10
3OE
9
3A
8
3Y
SOIC
TOP VIEW
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) SupplyVoltage to Ground
–0.5 to +4.6 V
VTERM(3) DC Switch Voltage VS
–0.5 to +5.5 V
VTERM(3) DC Input Voltage VIN
–0.5 to +5.5 V
VAC
AC Input Voltage (pulse width 20ns)
–3
V
IOUT
DC Output Current (max. sink current/pin)
120
mA
TSTG Storage Temperature
–65 to +150 °C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .
CAPACITANCE (TA = +25°C, F = 1MHz, VIN = 0V, VOUT =
0SVy) mbol
Parameter(1)
Typ. Max. Unit
CIN
Control Inputs
3
5
pF
CI/O
Quickswitch Channels (Switch OFF) 4
6
pF
CI/O
Quickswitch Channels (Switch ON)
8
12 pF
NOTE:
1. This parameter is guaranteed but not production tested.
PIN DESCRIPTION
Pin Names
I/O
Description
1A - 4A
I/O
Bus A
1Y - 4Y
I/O
Bus Y
1OE - 4OE
I
Output Enable
FUNCTION TABLE(1)
OE
A
Y
L
H
H
L
L
L
H
X
X
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Function
Connect
Connect
Disconnect
2


Part Number IDTQS3VH125
Description HIGH BANDWIDTH BUS SWITCH
Maker Renesas
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