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2SK2529
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1014-0800 (Previous: ADE-208-356F)
Rev.8.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D
G
1. Gate 2. Drain 3. Source
12 3
S
Rev.8.00 Sep 07, 2005 page 1 of 7
2SK2529
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
K2529 Datasheet
