Datasheet Summary
2SK2529
Silicon N Channel MOS FET
Application
High speed power switching
Features
- Low on-resistance
- RDS(on) = 7 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1014-0800 (Previous: ADE-208-356F)
Rev.8.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C- FM)
1. Gate 2. Drain 3. Source
12 3
Rev.8.00 Sep 07, 2005 page 1 of...
