K2956
K2956 is Silicon N-Channel MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 7 mΩ typ.
- 4 V gate drive devices.
- High speed switching
Outline
REJ03G1056-0401 (Previous: ADE-208-566B)
Rev.4.01 Apr 27, 2006
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C- FM)
1. Gate 2. Drain 3. Source
12 3
Rev.4.01 Apr 27, 2006 page 1 of 6
2SK2956
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol VDSS VGSS ID
ID(pulse)Note1 IDR
Pch Note2 Tch Tstg
Ratings 30 ±20 50 200 50 35 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A W
°C °C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20
Zero gate voltage drain current
IDSS
- Gate to source leak current
IGSS
- Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance
RDS(on)
-...
