K2980 Overview
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK) Rev.4.00 Sep 07, 2005 D 1. Source 2. Gate 3. Drain S Rev.4.00 Sep 07, 2005 page 1 of 6 2SK2980
K2980 Key Features
- Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
- 2.5 V gate drive devices
- Small package (MPAK)