K3510
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
FEATURES
- Super low on-state resistance:
RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
- Low Ciss: Ciss = 8500 p F TYP.
- Built-in gate protection diode
2SK3510-S
TO-262
2SK3510-ZJ 2SK3510-Z
TO-263 TO-220SMDNote
Note TO-220SMD package is produced only in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±83 ±332
Total Power Dissipation (TC = 25°C)
PT1
125 W
Total Power Dissipation (TA = 25°C) Channel Temperature
PT2 Tch
1.5 W 150 °C
(TO-262)
Storage Temperature
Tstg
- 55 to +150...
