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N0413N - N-channel MOSFET

Description

The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±100 A.
  • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413N-ZK-E2-AY ∗1 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Package TO-263 1.39 g TYP. Absolute Maximum Ratings (TA = 25°C, all te.

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Datasheet Details

Part number N0413N
Manufacturer Renesas
File Size 204.06 KB
Description N-channel MOSFET
Datasheet download datasheet N0413N Datasheet
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Full PDF Text Transcription

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N0413N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413N-ZK-E2-AY ∗1 800 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-263 1.39 g TYP.
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