| Title | |
| Description | The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 A • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tube Packing 50 p/tub... |
| Features |
• Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 A • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tube Packing 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the ... |
| Datasheet |
 N6006NZ Datasheet - 254.57KB |
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