N6006NZ Description
The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications.
N6006NZ Key Features
- Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
- Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)
- High current ID(DC) = ±6.0 A
- RoHS pliant