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NE202930 Datasheet

Silicon NPN Epitaxial High Frequency Transistor

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PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
FEATURES
High transition frequency fT = 11 GHz TYP.
Ideal for low noise and low distortion amplification
Suitable for equipments of low collector voltage (Less than 5 V)
Suitable for up to 1 GHz applications
APPLICATIONS
LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7D"
ORDERING INFORMATION
Part Number Order Number
Package
Marking
Supplying Form
NE202930-T1
NE202930-T1-A
3-pin super
minimold (30 PKG)
(Pb-Free)
R7D Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
(Base Short)
Collector to Emitter Voltage
(Base Open)
Emitter to Base Voltage
Collector Current
Total Power Dissipation Note
Junction Temperature
Storage Temperature
Note: Free air
Symbol
VCBO
VCES
VCEO
VEBO
IC
Ptot
Tj
Tstg
Ratings
9
9
6
2
100
150
150
65 to +150
Unit
V
V
V
V
mA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 1 of 6
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Renesas Electronics Components Datasheet

NE202930 Datasheet

Silicon NPN Epitaxial High Frequency Transistor

No Preview Available !

NE202930
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
ICBO
IEBO
hFE Note1
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 5 V, IC = 5 mA
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
Output 3rd Order Intercept Point
fT
S21e2
NF1
NF2
Ga1
Ga2
Cre Note 2
MSG Note 3
PO (1 dB)
OIP3
VCE = 5 V, IC = 30 mA, f = 1 GHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes: 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
S21
S12
MIN.
85
11.5
10.0
13.5
TYP.
140
11.0
13.5
1.15
1.5
12.0
13.5
0.6
15.5
19
32
MAX.
100
100
205
1.5
0.8
hFE CLASSIFICATION
Rank
Marking
hFE Value
YFB
R7D
85 to 205
Unit
nA
nA
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 2 of 6
Free Datasheet http://www.Datasheet4U.com


Part Number NE202930
Description Silicon NPN Epitaxial High Frequency Transistor
Maker Renesas
Total Page 8 Pages
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